BCR133WE6327HTSA1

BCR133WE6327HTSA1

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:e3b6417ac0c0 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:130 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

Download product information

BCR133WE6327HTSA1

Overview

The BCR133WE6327HTSA1 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SOT-323 package. It integrates a single transistor with built-in bias resistors R1 and R2, both nominally 10 kΩ. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 124°C. The device features a transition frequency of 130 MHz and operates within a junction temperature range of -65°C to 150°C.

Feature Summary

  • Integrates an NPN transistor with dual internal bias resistors (R1/R2 = 10kΩ) for simplified circuit design
  • Qualified according to AEC-Q101 standards for automotive applications
  • Provides high switching speed with a transition frequency of 130 MHz
  • Offers low saturation voltage and high DC current gain for efficient drive circuits

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Drive circuits

Procurement Notes

Verify the specific suffix WE6327HTSA1 against official Infineon documentation to confirm the exact packaging configuration and tape-and-reel specifications. Ensure compliance with RoHS requirements and check for any end-of-life notices or alternative recommendations directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a compact NPN digital transistor with integrated 10kΩ bias resistors is required. The SOT-323 package suits space-constrained designs. Verify that the 50V collector-emitter voltage and 100mA current limits meet the application's operational requirements and thermal constraints.

Part Context

This part belongs to the BCR133 series of NPN silicon digital transistors. The series includes variants like BCR133 (SOT-23), BCR133S (dual transistors in SOT-363), and BCR133W (single transistor in SOT-323). The BCR133WE6327HTSA1 specifically denotes the single-transistor version in the SOT-323 package with specific ordering and packaging attributes.

Replacement Considerations

Check for direct cross-reference part numbers from other manufacturers offering identical NPN digital transistor configurations with 10kΩ/10kΩ resistors in SOT-323 packages. Ensure pinout compatibility and electrical parameter equivalence, particularly regarding VCEO, IC, and R1/R2 values.

BCR133WE6327HTSA1BCR133WE6327HTSA1

Click on the inquiry