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The BCR133WE6327HTSA1 is an NPN silicon digital transistor from the Infineon BCR133 series, housed in a SOT-323 package. It integrates a single transistor with built-in bias resistors R1 and R2, both nominally 10 kΩ. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at case temperatures up to 124°C. The device features a transition frequency of 130 MHz and operates within a junction temperature range of -65°C to 150°C.
Verify the specific suffix WE6327HTSA1 against official Infineon documentation to confirm the exact packaging configuration and tape-and-reel specifications. Ensure compliance with RoHS requirements and check for any end-of-life notices or alternative recommendations directly from the manufacturer before finalizing procurement plans.
Select this component when a compact NPN digital transistor with integrated 10kΩ bias resistors is required. The SOT-323 package suits space-constrained designs. Verify that the 50V collector-emitter voltage and 100mA current limits meet the application's operational requirements and thermal constraints.
This part belongs to the BCR133 series of NPN silicon digital transistors. The series includes variants like BCR133 (SOT-23), BCR133S (dual transistors in SOT-363), and BCR133W (single transistor in SOT-323). The BCR133WE6327HTSA1 specifically denotes the single-transistor version in the SOT-323 package with specific ordering and packaging attributes.
Check for direct cross-reference part numbers from other manufacturers offering identical NPN digital transistor configurations with 10kΩ/10kΩ resistors in SOT-323 packages. Ensure pinout compatibility and electrical parameter equivalence, particularly regarding VCEO, IC, and R1/R2 values.