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The BCR135E6327HTSA1 is an NPN silicon digital transistor housed in a SOT-23 surface-mount package. It integrates internal bias resistors with R1 at 10 kΩ and R2 at 47 kΩ, yielding a typical resistor ratio of 0.21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation reaches 200 mW at case temperatures up to 102°C. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a transition frequency (fT) of 150 MHz, and a collector-base cutoff current (ICBO) limited to 100 nA.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the exact tape-and-reel packaging configuration and marking details. Ensure that the procurement specifications align with the required thermal resistance parameters and lead-free RoHS compliance requirements defined in the datasheet.
Select this component when a single NPN digital transistor with integrated biasing is required for compact designs. The 10 kΩ input resistor value suits standard logic interface levels. Consider the 200 mW power dissipation limit relative to ambient temperature derating curves if operating in enclosed environments or high-temperature conditions.
This part belongs to the BCR135 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR135S (dual transistors in SOT-363) and BCR135W (single transistor in SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical package dimensions.
Publicly confirmed substitute part numbers are not available in the provided source material.