BCR135E6327HTSA1

BCR135E6327HTSA1

$0.20
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:c8f399e84f3e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR135E6327HTSA1

Overview

The BCR135E6327HTSA1 is an NPN silicon digital transistor housed in a SOT-23 surface-mount package. It integrates internal bias resistors with R1 at 10 kΩ and R2 at 47 kΩ, yielding a typical resistor ratio of 0.21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation reaches 200 mW at case temperatures up to 102°C. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a transition frequency (fT) of 150 MHz, and a collector-base cutoff current (ICBO) limited to 100 nA.

Feature Summary

  • Integrates dual bias resistors for simplified switching circuit design
  • Optimized for high-speed operation with a 150 MHz transition frequency
  • Complies with AEC-Q101 automotive qualification standards

Applications

  • Switching circuits
  • Inverter applications
  • Interface driver circuits

Procurement Notes

Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm the exact tape-and-reel packaging configuration and marking details. Ensure that the procurement specifications align with the required thermal resistance parameters and lead-free RoHS compliance requirements defined in the datasheet.

Selection Notes

Select this component when a single NPN digital transistor with integrated biasing is required for compact designs. The 10 kΩ input resistor value suits standard logic interface levels. Consider the 200 mW power dissipation limit relative to ambient temperature derating curves if operating in enclosed environments or high-temperature conditions.

Part Context

This part belongs to the BCR135 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR135S (dual transistors in SOT-363) and BCR135W (single transistor in SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical package dimensions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

BCR135E6327HTSA1BCR135E6327HTSA1
$0.20
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