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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：150 MHz
- Power - Max：200 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR135E6359HTMA1 is an NPN silicon digital transistor from the Infineon BCR135 series, housed in a surface-mount SOT-23 package. It integrates two internal resistors: R1 with a typical value of 10 kΩ and R2 with a typical value of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation is rated at 200 mW for junction temperatures up to 102°C. Key electrical characteristics include a DC current gain (hFE) of 70 minimum, a transition frequency (fT) of 150 MHz, and a collector-emitter saturation voltage (VCEsat) of 0.3 V maximum.
Feature Summary
- Integrates bias resistors to simplify switching circuit design
- Qualified according to AEC Q101 automotive standards
- Provides high-speed performance with a 150 MHz transition frequency
Applications
- Switching circuits
- Inverter applications
- Interface driver circuits
Procurement Notes
Verify the specific ordering suffix E6359 against official documentation to confirm the exact packaging configuration and reel specifications. Confirm RoHS compliance status and ensure the component meets the required AEC Q101 qualification standards for the intended application environment before finalizing procurement.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for space-constrained designs. Ensure the operating voltage does not exceed 50 V and the load current remains within the 100 mA limit. Consider the thermal resistance characteristics if the ambient temperature approaches the maximum junction rating.
Part Context
This part belongs to the BCR135 family of NPN silicon digital transistors manufactured by Infineon Technologies. The family includes variants such as BCR135S and BCR135W, which offer different pin configurations and packages like SOT363 and SOT323. All variants share similar electrical characteristics but differ in physical footprint and internal resistor configurations.
Replacement Considerations
Direct substitutes must match the NPN polarity, 50 V VCEO rating, and integrated resistor values. Verify that any replacement component maintains the same SOT-23 footprint and meets AEC Q101 automotive qualification requirements if used in automotive applications.
FAQ
What are the values of the internal resistors?
The BCR135E6359HTMA1 contains two internal resistors: R1 is typically 10 kΩ and R2 is typically 47 kΩ.
Is this component qualified for automotive applications?
Yes, the BCR135 series is qualified according to the AEC Q101 standard.
What is the maximum collector current?
The maximum continuous collector current (IC) is 100 mA.
