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The BCR135E6433HTMA1 is an NPN silicon digital transistor from the Infineon BCR135 series, housed in a SOT-23 package. It integrates bias resistors with typical values of R1=10 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and total power dissipation of 200 mW at case temperatures up to 102°C. The device features a minimum DC current gain (hFE) of 70 at IC=5 mA and a transition frequency (fT) of 150 MHz. Operating temperature ranges from -65°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision and lot traceability upon receipt. Ensure storage conditions adhere to specified limits to maintain junction integrity. Check for physical damage on leads before soldering. Validate compliance with project-specific environmental regulations.
Select this component when a single NPN digital transistor with 10 kΩ input resistance is required. Verify that the 50 V collector-emitter rating meets system voltage constraints. Consider thermal derating curves if operating near maximum case temperature limits. Compare against other BCR135 variants like BCR135S or BCR135W if different package configurations are needed.
This part belongs to the BCR135 series of NPN silicon digital transistors. The series includes variants such as BCR135S (dual isolated transistors in SOT-363) and BCR135W (single transistor in SOT-323). All share similar electrical characteristics but differ in package type and internal configuration.
Direct substitutes within the same family include BCR135W and BCR135S, provided the package footprint matches the PCB layout. Cross-brand replacements require verification of pinout compatibility, VCEO ratings, and hFE specifications.
The typical resistor ratio (R1/R2) is 0.21, with R1 being 10 kΩ and R2 being 47 kΩ.
Yes, the BCR135 series is qualified according to the AEC-Q101 standard.
The maximum junction temperature (Tj) is 150°C.