BCR135E6433HTMA1

BCR135E6433HTMA1

$0.03
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:ee12cd1fedd7 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:200 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR135E6433HTMA1

Overview

The BCR135E6433HTMA1 is an NPN silicon digital transistor from the Infineon BCR135 series, housed in a SOT-23 package. It integrates bias resistors with typical values of R1=10 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and total power dissipation of 200 mW at case temperatures up to 102°C. The device features a minimum DC current gain (hFE) of 70 at IC=5 mA and a transition frequency (fT) of 150 MHz. Operating temperature ranges from -65°C to +150°C.

Feature Summary

  • Integrated bias network simplifies switching circuit design by eliminating external resistor requirements.
  • Qualified for automotive applications according to AEC-Q101 standards.
  • Lead-free packaging compliant with RoHS directives.

Applications

  • Switching circuits
  • Inverter applications
  • Interface driver circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision and lot traceability upon receipt. Ensure storage conditions adhere to specified limits to maintain junction integrity. Check for physical damage on leads before soldering. Validate compliance with project-specific environmental regulations.

Selection Notes

Select this component when a single NPN digital transistor with 10 kΩ input resistance is required. Verify that the 50 V collector-emitter rating meets system voltage constraints. Consider thermal derating curves if operating near maximum case temperature limits. Compare against other BCR135 variants like BCR135S or BCR135W if different package configurations are needed.

Part Context

This part belongs to the BCR135 series of NPN silicon digital transistors. The series includes variants such as BCR135S (dual isolated transistors in SOT-363) and BCR135W (single transistor in SOT-323). All share similar electrical characteristics but differ in package type and internal configuration.

Replacement Considerations

Direct substitutes within the same family include BCR135W and BCR135S, provided the package footprint matches the PCB layout. Cross-brand replacements require verification of pinout compatibility, VCEO ratings, and hFE specifications.

FAQ

What is the typical resistor ratio for the BCR135?

The typical resistor ratio (R1/R2) is 0.21, with R1 being 10 kΩ and R2 being 47 kΩ.

Is the BCR135 qualified for automotive use?

Yes, the BCR135 series is qualified according to the AEC-Q101 standard.

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150°C.

BCR135E6433HTMA1BCR135E6433HTMA1
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