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The BCR135WE6327BTSA1 is an NPN silicon digital transistor from the BCR135 series, manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors (R1=10 kΩ, R2=47 kΩ) in a SOT-323 package. Key electrical parameters include a collector-emitter voltage of 50 V, continuous collector current of 100 mA, and total power dissipation of 250 mW at case temperatures up to 124°C. The device features a minimum DC current gain of 70 and a transition frequency of 150 MHz. It is qualified according to AEC-Q101 standards for automotive applications.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix matches the required SOT-323 packaging and AEC-Q101 qualification status. Ensure storage conditions adhere to moisture sensitivity levels prior to soldering. Review the latest datasheet revision for any updates on thermal resistance values or recommended soldering profiles.
Select this component when an NPN digital transistor with a 10 kΩ base resistor and 47 kΩ emitter-base resistor is required. The SOT-323 package suits space-constrained surface-mount designs. Consider the 50 V breakdown voltage and 100 mA current limits against load requirements. Verify compatibility with operating temperatures ranging from -65°C to 150°C junction temperature.
This part belongs to the BCR135 series of NPN digital transistors. Other variants in the series include BCR135S (dual isolated transistors in SOT-363) and standard BCR135 (in SOT-23). The 'W' designation indicates the SOT-323 package, while 'E6327B' specifies the tape and reel packaging configuration.
Direct substitutes within the same family include BCR135WE6327HTSA1. Cross-manufacturer equivalents should match the NPN polarity, 50V VCEO, 100mA IC, and integrated 10kΩ/47kΩ resistor ratio in a SOT-323 package.