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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：130 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR141E6433HTMA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors, specifically R1 and R2, both rated at 22 kΩ. The device operates with a maximum collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a transition frequency (fT) of 130 MHz. The component is housed in the SC74 package (SOT-323), suitable for surface-mount applications.
Feature Summary
- Integrates dual 22 kΩ bias resistors to simplify circuit design
- Provides high-speed switching capability with a 130 MHz transition frequency
- Features low saturation voltage for efficient signal inversion
Applications
- Switching circuits
- Inverter logic gates
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix E6433HTMA1 against official Infineon documentation to confirm the SC74 packaging and RoHS compliance status. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability of the manufacturing batch.
Selection Notes
Select this component when a compact NPN digital solution with fixed 22 kΩ internal biasing is required. The SC74 package offers space efficiency compared to larger SMD formats. Verify that the 50 V breakdown voltage and 100 mA current limits align with the target application's operational parameters.
Part Context
This part belongs to the BCR141 series of NPN silicon digital transistors. The series includes variants such as BCR141F, BCR141S, BCR141U, and BCR141W, which differ primarily in their physical package types like TSFP-3, SOT363, and SOT323. The E6433HTMA1 designation specifies the standard reel packaging configuration.
Replacement Considerations
Direct substitutes within the same family include BCR141F, BCR141S, BCR141U, and BCR141W. These alternatives share identical electrical specifications but utilize different packages such as TSFP-3, SOT363, or SOT323. Cross-referencing pin configurations is essential due to package variations.
FAQ
What are the values of the internal bias resistors?
The BCR141E6433HTMA1 contains two integrated bias resistors, R1 and R2, both with a nominal value of 22 kΩ.
What is the maximum power dissipation for this component?
The total power dissipation (Ptot) is specified as 250 mW, dependent on the case temperature constraints defined in the datasheet.
Is this component qualified for automotive applications?
Yes, the BCR141 series is qualified according to the AEC-Q101 standard.
