BCR141WE6327HTSA1

Description：TRANS PREBIAS NPN 50V SOT323
Series：-

SKU:a15e55dab44b Category: Single, Pre-Biased Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：22 kOhms
Resistor - Emitter Base (R2)：22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：130 MHz
Power - Max：250 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323

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BCR141WE6327HTSA1

Overview

The Infineon BCR141WE6327HTSA1 is an NPN silicon digital transistor housed in a SOT-323 (SC-74) surface-mount package. It integrates bias resistors with typical values of R1=22kΩ and R2=22kΩ, yielding a resistor ratio of 1:1. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 124°C. The device features a transition frequency (fT) of 130 MHz and a DC current gain (hFE) minimum of 50.

Feature Summary

Integrated dual bias resistors for simplified circuit design
Qualified according to AEC-Q101 automotive standards
Lead-free RoHS compliant packaging

Applications

Switching circuits
Inverter applications
Interface circuits
Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package type and tape-and-reel specifications. Confirm that the component meets the required environmental compliance standards for the target application before finalizing procurement orders.

Selection Notes

Select this component when a single NPN digital transistor with integrated biasing is required in a compact SOT-323 footprint. Ensure the design accounts for the 250 mW power dissipation limit and the 50 V voltage ratings under expected operating temperatures.

Part Context

This part belongs to the BCR141 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants with different packages such as TSFP-3, SOT363, and SC74, all sharing similar internal electrical characteristics but differing in physical dimensions and thermal properties.

Replacement Considerations

Check for other members of the BCR141 series or equivalent NPN digital transistors from other manufacturers if pin compatibility and electrical ratings match. Verify package dimensions and marking codes to ensure mechanical fit.