BCR142B6327HTLA1

Overview

The BCR142B6327HTLA1 is an NPN Silicon Digital Transistor from Infineon Technologies, featuring built-in bias resistors R1 (22 kΩ) and R2 (47 kΩ). It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) of 70 at IC = 5 mA and achieves a transition frequency (fT) of 150 MHz. Total power dissipation reaches 200 mW in the SOT-23 package. It is qualified according to AEC-Q101 standards.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• High-speed switching capability with 150 MHz transition frequency
• Automotive-grade qualification compliant with AEC-Q101

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required package type and tape-and-reel specifications. Ensure compliance with RoHS lead-free requirements before integration into final assemblies.

Selection Notes

Select this component when a single NPN digital transistor with integrated base and emitter resistors is required. The 22 kΩ input resistance suits standard logic interface levels. Verify thermal constraints against the 200 mW dissipation limit for the target operating temperature range.

Part Context

This part belongs to the BCR142 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as the BCR142W, which utilizes the SOT-323 package instead of the standard SOT-23 form factor found in this model.

Replacement Considerations

Direct substitutes within the same series include the BCR142E6327HTSA1. Cross-brand replacements require matching the 50 V rating, 100 mA current capacity, and the specific 22 kΩ / 47 kΩ internal resistor ratio.