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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：150 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
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Overview
The BCR142WE6327HTSA1 is an NPN silicon digital transistor from the BCR142 series, housed in a SOT-323 (SC-70) surface-mount package. It integrates bias resistors R1 (22 kΩ typical) and R2 (47 kΩ typical) with a ratio of 0.47. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, a maximum collector current (IC) of 100 mA, and a transition frequency (fT) of 150 MHz at IC = 10 mA. The device supports a junction temperature up to 150 °C and operates within a storage temperature range of -65 °C to +150 °C.
Feature Summary
- Integrated bias network consisting of a base resistor and an emitter-base resistor for simplified circuit design
- Qualified according to AEC-Q101 standards for automotive applications
- High switching speed capability with a transition frequency of 150 MHz
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm the SOT-323 package configuration. Ensure compliance with RoHS requirements and check for any end-of-life notifications or alternative part recommendations directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN digital transistor with integrated biasing is required for high-speed switching. The SOT-323 package offers space savings compared to standard SOT-23 variants. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity align with the specific load requirements of the target application.
Part Context
This part belongs to the BCR142 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series includes variants with different packaging options, such as the standard SOT-23 package. The 'W' designation specifically identifies the SOT-323 form factor within this product family.
Replacement Considerations
Consult the official BCR142 datasheet for confirmed substitute part numbers within the same series. Cross-reference pin configurations and thermal resistance values to ensure compatibility during replacement.
FAQ
What are the internal resistor values for the BCR142WE6327HTSA1?
The device features a built-in bias resistor R1 of 22 kΩ and a resistor R2 of 47 kΩ, resulting in a typical resistor ratio (R1/R2) of 0.47.
Is the BCR142WE6327HTSA1 suitable for automotive applications?
Yes, the component is qualified according to the AEC-Q101 standard, making it suitable for automotive electronics.
What is the maximum power dissipation for the SOT-323 package version?
For the BCR142W variant in the SOT-323 package, the total power dissipation (Ptot) is rated at 250 mW when the soldering point temperature (TS) is less than or equal to 124 °C.
