BCR148E6393HTSA1

Overview

The BCR148E6393HTSA1 is an NPN silicon digital transistor from the Infineon BCR148 series, housed in a surface-mount SOT-23 package. It integrates two internal bias resistors with nominal values of R1 = 47 kΩ and R2 = 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) of at least 70 and a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 200 mW for this specific package variant, with a junction temperature limit of 150 °C.

Feature Summary

• Integrates dual bias resistors to simplify circuit design and reduce component count
• Provides high switching speed with a transition frequency of 100 MHz
• Features robust input protection with defined forward and reverse voltage limits

Applications

• Switching circuits
• Inverter applications
• Interface driver circuits

Procurement Notes

Verify the complete ordering code against official Infineon documentation to ensure correct suffix alignment. Confirm RoHS compliance status and AEC Q101 qualification requirements prior to integration into automotive or industrial systems.

Selection Notes

Select this component when a single NPN digital switch with integrated base and emitter resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider thermal derating curves if operating near the maximum junction temperature.

Part Context

This part belongs to the BCR148 family of NPN silicon digital transistors. The series includes variants such as BCR148S (dual transistors in SOT-363) and BCR148W (single transistor in SOT-323), offering different packaging options for space-constrained designs while maintaining similar electrical performance profiles.

Replacement Considerations

Consult the official cross-reference data for compatible substitutes. Verify pinout compatibility and electrical parameter equivalence before substituting.