BCR148E6433HTMA1

Overview

The BCR148E6433HTMA1 is an NPN silicon digital transistor from the Infineon BCR148 series, housed in a SOT-23 package. It integrates bias resistors with typical values of R1=47 kΩ and R2=47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 200 mW at case temperatures up to 102°C. The device features a DC current gain (hFE) of 70 minimum at IC=5 mA and VCE=5 V, with a transition frequency (fT) of 100 MHz.

Feature Summary

• Integrates internal bias resistors for simplified circuit design
• Qualified according to AEC-Q101 standards
• RoHS compliant Pb-free packaging

Applications

• Switching circuits
• Inverter applications
• Interface driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for specific AEC-Q101 qualification documentation relevant to automotive requirements. Ensure storage conditions adhere to specified temperature ranges to maintain device integrity prior to assembly.

Selection Notes

Select this component when an NPN digital transistor with 47 kΩ input resistance is required. Consider the 50 V voltage rating and 100 mA current capacity against load demands. Verify thermal management capabilities given the 200 mW power dissipation limit in the SOT-23 package.

Part Context

This part belongs to the BCR148 series, which includes variants like BCR148S (dual transistors in SOT-363) and BCR148W (single transistor in SOT-323). All share similar electrical characteristics but differ in pin configurations and package types. The E6433 suffix indicates specific tape and reel packaging details.

Replacement Considerations

Direct substitutes within the same family include BCR148S and BCR148W, though pinouts differ. Cross-family replacements require matching VCEO, IC, and resistor values. Verify package compatibility and thermal performance before substitution.