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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The BCR158E6327HTSA1 is a PNP Silicon Digital Transistor from Infineon Technologies, housed in an SOT-23 surface-mount package. It integrates internal bias resistors with typical values of R1 = 2.2 kΩ and R2 = 47 kΩ. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a total power dissipation of 200 mW at case temperatures up to 102°C. It operates within a junction temperature range of -65°C to 150°C.
Feature Summary
- Integrates built-in bias resistors for simplified circuit design
- Qualified according to AEC-Q101 automotive standards
- Pb-free RoHS compliant packaging
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the component authenticity by checking the marking code on the SOT-23 package against official Infineon documentation. Confirm that the ordering suffix E6327 corresponds to the standard tape-and-reel packing format specified in the datasheet. Ensure compliance with RoHS requirements if environmental regulations apply to the assembly process.
Selection Notes
Select this component when a compact PNP digital transistor solution is required for low-power switching or logic interface tasks. The integrated resistor network reduces external component count compared to discrete bipolar transistors. Consider the 50 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the specific load conditions.
Part Context
This part belongs to the BCR158 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as the BCR158W, which utilizes the SOT-323 package. These components are designed to replace multiple discrete components, offering a space-saving alternative for general-purpose switching and amplification applications.
Replacement Considerations
Direct substitutes within the same family include the BCR158W for SOT-323 form factor compatibility. Verify pinout configurations and thermal resistance differences between SOT-23 and SOT-323 packages before implementation.
FAQ
What are the typical values for the internal bias resistors?
The typical internal bias resistor values are R1 = 2.2 kΩ and R2 = 47 kΩ.
Is this component suitable for automotive applications?
Yes, the BCR158 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
