BCR158WE6327HTSA1

Overview

The BCR158WE6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in an SOT-323 surface-mount package. It integrates bias resistors R1 (2.2 kΩ) and R2 (47 kΩ). Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature up to 124°C. The device features a minimum DC current gain of 70, a transition frequency of 200 MHz, and operates within a junction temperature range of -65°C to 150°C.

Feature Summary

• Integrates built-in bias resistors for simplified circuit design
• Qualified according to AEC-Q101 automotive standards
• Provides high switching speed with a 200 MHz transition frequency

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the SOT-323 footprint matches the target PCB layout requirements before finalizing component selection.

Selection Notes

Select this component when a compact PNP digital transistor with integrated biasing is required. The SOT-323 package offers space efficiency compared to larger alternatives. Verify thermal constraints, as the maximum power dissipation depends on maintaining the case temperature below 124°C.

Part Context

This part belongs to the BCR158 series of PNP silicon digital transistors manufactured by Infineon Technologies. The series includes variants such as the BCR158 in the SOT-23 package. The WE6327HTSA1 designation specifically identifies the SOT-323 version with standard tape-and-reel packaging.

Replacement Considerations

BCR158WH6327XTSA1