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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
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Overview
The Infineon BCR158WH6327XTSA1 is a PNP silicon digital transistor housed in a SOT-323 surface-mount package. It integrates an NPN transistor with built-in bias resistors, specifically R1 at 2.2 kΩ and R2 at 47 kΩ. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation reaches 250 mW at case temperatures up to 124°C. Key electrical characteristics include a DC current gain (hFE) of 70 minimum, a transition frequency (fT) of 200 MHz, and a collector-emitter saturation voltage of 0.3 V maximum.
Feature Summary
- Integrated dual-resistor network simplifies switching circuit design by eliminating external components.
- AEC-Q101 qualified for automotive reliability standards.
- High-frequency performance suitable for fast switching applications.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the component against official Infineon documentation to confirm authenticity and revision status. Ensure the ordering suffix matches the required packaging configuration. Cross-reference the specific part number with authorized distribution channels to guarantee supply chain integrity and compliance with RoHS directives.
Selection Notes
Select this component when a compact PNP digital solution with integrated biasing is required. The SOT-323 package offers space efficiency compared to larger alternatives. Consider the 2.2 kΩ input resistance and 47 kΩ output resistance values for base drive calculations. Verify thermal constraints relative to the 250 mW dissipation limit in the target application environment.
Part Context
This part belongs to the BCR158 series of PNP silicon digital transistors manufactured by Infineon Technologies. The 'W' designation indicates the SOT-323 package variant, while the suffix 'H6327XTSA1' specifies the tape-and-reel packaging format. This series is designed for general-purpose switching and logic interface tasks.
Replacement Considerations
Direct substitutes within the same series include the BCR158 (SOT-23 package). Other compatible PNP digital transistors with similar resistor ratios may be considered if pinout compatibility and electrical ratings align with the original design requirements.
FAQ
What are the specific values of the internal bias resistors?
The built-in bias resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.
Is this component suitable for automotive applications?
Yes, the BCR158WH6327XTSA1 is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
