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The BCR166B6327HTLA1 is a PNP silicon digital transistor from Infineon Technologies, featuring an integrated bias resistor network with R1 at 4.7 kΩ and R2 at 47 kΩ. It operates within a collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) of 70 and exhibits a transition frequency (fT) of 160 MHz. Thermal management allows for a total power dissipation of 200 mW in the SOT-23 package and 250 mW in the SOT-323 variant, with a maximum junction temperature of 150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and check for specific automotive qualification documentation if required for end-use. Ensure proper handling procedures are followed during storage and assembly to maintain electrical integrity.
Select this component for designs requiring a compact PNP digital solution with built-in biasing. Consider the SOT-23 or SOT-323 package based on available PCB space. Evaluate thermal constraints against the specified power dissipation limits for the chosen operating environment.
This part belongs to the BCR166 series of PNP silicon digital transistors. It shares functional characteristics with other members of the family but differs in specific internal resistor values and package options like SOT-23 and SOT-323.
Check datasheets for alternative PNP digital transistors with similar VCEO, IC, and hFE ratings. Verify pin compatibility and thermal resistance values before substitution.
The typical input resistor R1 value is 4.7 kΩ.
Yes, the component is qualified according to the AEC-Q101 standard.
The maximum junction temperature (Tj) is 150°C.