BCR166E6327HTSA1

Overview

The BCR166E6327HTSA1 is a PNP silicon digital transistor manufactured by Infineon Technologies. It integrates bias resistors R1 (4.7 kΩ) and R2 (47 kΩ) within an SOT-23 package. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at case temperatures up to 102°C. The device features a transition frequency of 160 MHz and complies with AEC-Q101 qualification standards.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• Qualified according to AEC-Q101 automotive standards
• Pb-free RoHS compliant packaging

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm the exact tape-and-reel configuration and manufacturing lot details. Ensure compatibility with the required SOT-23 footprint and thermal management constraints during integration.

Selection Notes

Select this component when a PNP digital transistor with integrated biasing is required for space-constrained designs. Consider the 200 mW power dissipation limit and the 50 V voltage rating to ensure operation remains within safe limits under expected load conditions.

Part Context

This part belongs to the BCR166 series of PNP silicon digital transistors. It shares the same internal architecture as the BCR166W variant but utilizes the SOT-23 package instead of the SOT-323 form factor, offering different thermal and spatial characteristics for PCB layout.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.