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The BCR166E6433HTMA1 is a PNP silicon digital transistor from Infineon Technologies, housed in an SOT-23 surface-mount package. It integrates internal bias resistors with typical values of R1 = 4.7 kΩ and R2 = 47 kΩ. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = 5 mA, a transition frequency (fT) of 160 MHz, and a collector-emitter saturation voltage (VCEsat) maximum of 0.3 V. Total power dissipation is rated at 200 mW for the SOT-23 package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and Pb-free packaging status prior to integration. Ensure storage conditions remain within specified limits to maintain junction integrity. Validate that the specific ordering suffix matches the required SOT-23 package variant for your PCB layout constraints.
Select this component when a compact PNP digital solution with integrated biasing is required. The SOT-23 package suits space-constrained designs. Verify that the 50 V collector-emitter rating meets the system voltage requirements. Consider the 200 mW power dissipation limit relative to ambient temperature and thermal resistance calculations for the specific application environment.
This part belongs to the BCR166 series of PNP silicon digital transistors manufactured by Infineon Technologies. The E6433HTMA1 suffix denotes the specific tape-and-reel packaging configuration compatible with automated surface-mount assembly processes. The series is designed for general-purpose switching and logic inversion tasks.
Direct substitutes must match the PNP polarity, SOT-23 footprint, and integrated resistor values. Verify equivalent VCEO ratings and hFE specifications. Cross-reference with other BCR series variants if pinout compatibility differs.