BCR166WE6327HTSA1

Description：TRANS PREBIAS PNP 50V SOT323
Series：-

SKU:7ffa0d51deb0 Category: Single, Pre-Biased Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：160 MHz
Power - Max：250 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323

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BCR166WE6327HTSA1

Overview

The Infineon BCR166WE6327HTSA1 is a PNP silicon digital transistor featuring an integrated bias resistor network (R1 = 4.7 kΩ, R2 = 47 kΩ). It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device dissipates up to 250 mW in the SOT-323 package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a DC current gain (hFE) of 70 at 5 mA, a transition frequency (fT) of 160 MHz, and a collector-emitter saturation voltage of 0.3 V.

Feature Summary

Integrated bias resistors simplify circuit design by reducing component count.
Automotive-grade reliability certified under AEC-Q101 standards.
High-speed switching capability supported by a 160 MHz transition frequency.

Applications

Switching circuits
Inverter applications
Interface circuits
Driver circuits

Procurement Notes

Verify the specific suffix 'E6327HTSA1' against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability for automotive-grade components.

Selection Notes

Select this PNP variant when a negative logic interface or high-side switching configuration is required. The built-in resistor ratio of approximately 0.1 provides predictable turn-on characteristics. Verify that the 50 V breakdown voltage aligns with the system's maximum operating limits.

Part Context

This component belongs to the BCR166 series of PNP digital transistors manufactured by Infineon Technologies. The series is designed for general-purpose switching and logic interfacing tasks where space constraints and simplified biasing are critical design factors.

Replacement Considerations

Cross-reference with other PNP digital transistors offering similar 50 V ratings and integrated bias networks. Verify pinout compatibility between SOT-23 and SOT-323 packages if physical footprint changes are permissible in the design.