BCR166WH6327XTSA1

Overview

The BCR166WH6327XTSA1 is a PNP silicon digital transistor featuring integrated bias resistors R1 (4.7 kΩ) and R2 (47 kΩ). It operates with a collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation up to 250 mW in the SOT-323 package. The device meets AEC-Q101 automotive standards and functions within a junction temperature range of -65°C to 150°C.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• Automotive-grade qualification compliant with AEC-Q101
• Lead-free packaging ensuring RoHS compliance

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific package variant required for your assembly process. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent soldering defects during surface mount placement.

Selection Notes

Select this component when a compact PNP switching solution with built-in base drive is required. The integrated resistor ratio simplifies logic interface requirements. Verify thermal constraints against the specific ambient operating temperature to ensure the total power dissipation limits are not exceeded during continuous operation.

Part Context

This part belongs to the BCR166 series of PNP digital transistors manufactured by Infineon Technologies. The 'W' designation indicates the SOT-323 surface-mount package configuration. The series is engineered for high-density PCB layouts where space conservation and reliable switching performance are critical design parameters.

Replacement Considerations

Direct substitutes must match the PNP polarity, 50V rating, and integrated resistor values. Verify pinout compatibility between SOT-23 and SOT-323 packages if cross-referencing with non-W variants.