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The BCR169WE6327 is a pre-biased PNP digital transistor manufactured by Infineon Technologies. It integrates a single PNP silicon transistor with internal biasing resistors within an SOT-323 surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 70, a typical input resistance of 10 kOhms, and a power dissipation rating of 250 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm availability status as distribution channels may list obsolete or end-of-life variants. Ensure compliance with RoHS directives if required for the target application environment.
Select this component when a PNP configuration with integrated base biasing is required. Compare the 10 kOhm input resistance against other BCR series variants like BCR185WH6327 if different drive currents are needed. Verify that the SOT-323 footprint matches the PCB layout constraints and thermal requirements for 250 mW dissipation.
This part belongs to the Infineon BCR169 series of pre-biased transistors. It serves as a PNP counterpart to NPN digital transistor families. The E6327 suffix typically denotes specific reel packaging configurations used by distributors. It is functionally similar to other SOT-323 packaged digital transistors but offers specific gain and resistance values defined by the manufacturer.
The maximum collector-emitter voltage (VCEO) is 50 V.
Yes, it is a pre-biased transistor that integrates biasing resistors internally.
The typical input resistance is 10 kOhms.