BCR169WE6327HTSA1

BCR169WE6327HTSA1

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-

SKU:685b37584550 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR169WE6327HTSA1

Overview

The BCR169WE6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single PNP transistor with an internal bias resistor (R1 = 4.7 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 124°C. The device features a DC current gain (hFE) ranging from 120 to 630, a transition frequency (fT) of 200 MHz, and operates within a junction temperature range of -65°C to 150°C.

Feature Summary

  • Integrates a PNP transistor with a built-in 4.7 kΩ bias resistor for simplified circuit design
  • Qualified according to AEC-Q101 standards for automotive applications
  • Provides high switching speed with a transition frequency of 200 MHz

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the component authenticity by checking the marking code 'WS' on the SOT-323 package against official Infineon documentation. Confirm that the ordering suffix matches the specific tape-and-reel packaging configuration required for your assembly line. Ensure compliance with RoHS directives as indicated in the datasheet specifications.

Selection Notes

Select this component when a compact PNP digital solution with integrated base resistance is required. The SOT-323 package offers space efficiency compared to larger packages. Consider the 4.7 kΩ internal resistor value for appropriate base drive current limitations in low-power interface applications.

Part Context

This part belongs to the BCR169 series of PNP Silicon Digital Transistors. The 'W' designation specifically identifies the SOT-323 package variant, distinguishing it from the SOT-23 (BCR169) and dual-transistor SOT-363 (BCR169S) versions within the same functional family.

Replacement Considerations

Direct substitutes within the same series include BCR169H6327XTSA1 (SOT-23 package) and BCR169SH6327XTSA1 (SOT-363 package), provided the footprint allows. Cross-package replacements require PCB layout modifications.

BCR169WE6327HTSA1BCR169WE6327HTSA1

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