SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR169WE6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-323 surface-mount package. It integrates a single PNP transistor with an internal bias resistor (R1 = 4.7 kΩ). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 124°C. The device features a DC current gain (hFE) ranging from 120 to 630, a transition frequency (fT) of 200 MHz, and operates within a junction temperature range of -65°C to 150°C.
Verify the component authenticity by checking the marking code 'WS' on the SOT-323 package against official Infineon documentation. Confirm that the ordering suffix matches the specific tape-and-reel packaging configuration required for your assembly line. Ensure compliance with RoHS directives as indicated in the datasheet specifications.
Select this component when a compact PNP digital solution with integrated base resistance is required. The SOT-323 package offers space efficiency compared to larger packages. Consider the 4.7 kΩ internal resistor value for appropriate base drive current limitations in low-power interface applications.
This part belongs to the BCR169 series of PNP Silicon Digital Transistors. The 'W' designation specifically identifies the SOT-323 package variant, distinguishing it from the SOT-23 (BCR169) and dual-transistor SOT-363 (BCR169S) versions within the same functional family.
Direct substitutes within the same series include BCR169H6327XTSA1 (SOT-23 package) and BCR169SH6327XTSA1 (SOT-363 package), provided the footprint allows. Cross-package replacements require PCB layout modifications.