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The BCR169WH6327XTSA1 is a PNP silicon digital transistor from the BCR169 series, housed in an SOT-323 surface-mount package. It features a built-in bias resistor (R1) with a typical value of 4.7 kΩ and a maximum collector-emitter voltage (VCEO) of 50 V. The device supports a continuous collector current of 100 mA and operates within a junction temperature range of -65°C to 150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a total power dissipation of 250 mW.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent lifecycle status updates before finalizing procurement plans.
Select this component when a compact PNP digital solution with integrated biasing is required. Consider the SOT-323 package constraints regarding thermal dissipation and ensure the 50 V voltage rating aligns with the target circuit's maximum operating levels.
This part belongs to the BCR169 series of PNP silicon digital transistors. The series includes variants like BCR169S (SOT-363) and standard BCR169 (SOT-23), offering different pin configurations and isolation options while maintaining similar electrical performance profiles for general-purpose switching.
Direct substitutes may include other PNP digital transistors with comparable VCEO ratings and integrated bias resistors. Verify pin compatibility and thermal resistance values when considering alternatives from other manufacturers.
The typical value of the internal bias resistor (R1) is 4.7 kΩ, with a range from 3.2 kΩ to 6.2 kΩ.
Yes, the BCR169 series is qualified according to the AEC-Q101 standard.
The maximum collector-emitter voltage (VCEO) is 50 V.