BCR169WH6327XTSA1

BCR169WH6327XTSA1

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-

SKU:665b7c27269e Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR169WH6327XTSA1

Overview

The BCR169WH6327XTSA1 is a PNP silicon digital transistor from the BCR169 series, housed in an SOT-323 surface-mount package. It features a built-in bias resistor (R1) with a typical value of 4.7 kΩ and a maximum collector-emitter voltage (VCEO) of 50 V. The device supports a continuous collector current of 100 mA and operates within a junction temperature range of -65°C to 150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 630 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a total power dissipation of 250 mW.

Feature Summary

  • Integrated bias resistor simplifies switching circuit design by reducing external component count.
  • High DC current gain ensures reliable operation across varying load conditions.
  • Qualified according to AEC-Q101 standards for automotive applications.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any recent lifecycle status updates before finalizing procurement plans.

Selection Notes

Select this component when a compact PNP digital solution with integrated biasing is required. Consider the SOT-323 package constraints regarding thermal dissipation and ensure the 50 V voltage rating aligns with the target circuit's maximum operating levels.

Part Context

This part belongs to the BCR169 series of PNP silicon digital transistors. The series includes variants like BCR169S (SOT-363) and standard BCR169 (SOT-23), offering different pin configurations and isolation options while maintaining similar electrical performance profiles for general-purpose switching.

Replacement Considerations

Direct substitutes may include other PNP digital transistors with comparable VCEO ratings and integrated bias resistors. Verify pin compatibility and thermal resistance values when considering alternatives from other manufacturers.

FAQ

What is the typical value of the internal bias resistor?

The typical value of the internal bias resistor (R1) is 4.7 kΩ, with a range from 3.2 kΩ to 6.2 kΩ.

Is this component qualified for automotive use?

Yes, the BCR169 series is qualified according to the AEC-Q101 standard.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

BCR169WH6327XTSA1BCR169WH6327XTSA1

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