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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
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Overview
The Infineon BCR183E6327HTSA1 is a PNP silicon digital transistor housed in an SOT-23 surface-mount package. It integrates two internal resistors, R1 and R2, both with a typical value of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. Total power dissipation is rated at 200 mW for this specific package variant. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a collector-base cutoff current (ICBO) maximum of 100 nA.
Feature Summary
- Integrates dual bias resistors to simplify circuit design
- Optimized for switching and inverter applications
- Qualified for automotive environments per AEC-Q101 standards
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the component against official Infineon datasheets to confirm pinout alignment and thermal resistance values. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the marking code on the physical unit to validate authenticity before integration into production assemblies.
Selection Notes
Select this component when a compact PNP solution with integrated base drive resistors is required. The 10 kΩ resistor ratio facilitates direct interfacing with standard logic levels. Consider the 200 mW power dissipation limit relative to ambient operating temperatures during the initial design phase.
Part Context
This part belongs to the BCR183 series of PNP digital transistors manufactured by Infineon Technologies. The series includes variants such as BCR183S, BCR183U, and BCR183W, which differ primarily in package type and thermal characteristics while maintaining similar electrical performance profiles.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic specifications without validating electrical parameters against the original datasheet.
FAQ
What are the typical values for the internal resistors?
The internal bias resistors R1 and R2 both have a typical value of 10 kΩ.
Is this component suitable for automotive applications?
Yes, the BCR183 series is qualified according to the AEC-Q101 standard.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
