BCR183E6359HTMA1

Overview

The Infineon BCR183E6359HTMA1 is a PNP silicon digital transistor featuring an integrated bias resistor network with R1 and R2 both at 10 kΩ. It provides a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a transition frequency (fT) of 200 MHz. The device operates within a junction temperature range of -65 °C to 150 °C and is qualified according to AEC-Q101 standards.

Feature Summary

• Integrated dual bias resistors for simplified circuit design
• AEC-Q101 automotive qualification for reliability
• High switching speed suitable for interface applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix E6359HTMA1 against official ordering lists to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS requirements and check for any end-of-life notifications before finalizing procurement plans.

Selection Notes

Select this component when a compact PNP solution with matched internal resistors is required. Consider the 100 mA current limit and 50 V breakdown voltage for appropriate load matching. Verify thermal dissipation capabilities based on the selected package variant.

Part Context

This part belongs to the BCR183 series of PNP digital transistors. It integrates two resistors internally to reduce board space and simplify biasing networks compared to discrete transistor configurations.

Replacement Considerations

Check for direct equivalents in the BCR183 family such as BCR183S or BCR183W if pinout compatibility is required. Verify that substitute components meet the same AEC-Q101 qualification and electrical parameter limits.