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The BCR183E6433HTMA1 is a PNP silicon digital transistor manufactured by Infineon Technologies. It features an integrated bias resistor network with R1 and R2 both at 10 kΩ, housed in a SOT-23 surface-mount package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) of 30 at IC = 5 mA, a transition frequency (fT) of 200 MHz, and a total power dissipation (Ptot) of 200 mW. It operates within a junction temperature range of -65°C to +150°C and meets AEC-Q101 qualification standards.
Verify the component status as End-of-Life or obsolete before procurement planning. Confirm availability through authorized distributors and check for potential supply constraints. Ensure that the specific ordering suffix matches the required package type and tape-and-reel specifications for automated assembly processes.
Select this component for applications requiring a single PNP digital transistor with built-in base resistors. The 10 kΩ resistor configuration provides a standard drive interface. Consider the thermal resistance and power dissipation limits when designing for high ambient temperatures or dense PCB layouts.
This part belongs to the BCR183 series of PNP silicon digital transistors from Infineon. The series includes variants such as BCR183S, BCR183U, and BCR183W, which offer different package options like SC74 and SOT363. The E6433HTMA1 suffix specifically denotes the SOT-23 packaging and manufacturing lot details.
Direct substitutes may include other PNP digital transistors with similar 10kΩ/10kΩ resistor ratios and SOT-23 packages. Verify pinout compatibility and electrical parameters such as VCEO and IC against the original requirements.