BCR183WE6327HTSA1

Overview

The Infineon BCR183WE6327HTSA1 is a PNP Silicon Digital Transistor housed in a SOT-323 surface-mount package. It integrates two internal bias resistors, R1 and R2, both with a typical value of 10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C. Transition frequency reaches 200 MHz, and it meets AEC-Q101 qualification standards for automotive applications.

Feature Summary

• Integrates dual bias resistors to simplify circuit design
• Qualified for automotive environments under AEC-Q101
• Optimized for high-speed switching operations

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix HTSA1 against official documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the required automotive grade specifications before integration into final assemblies.

Selection Notes

Select this model when a compact PNP digital transistor with integrated biasing is required. The SOT-323 package suits space-constrained designs. Verify that the 50 V rating and 100 mA current limits align with the target application's electrical requirements.

Part Context

This component belongs to the BCR183 series of PNP silicon digital transistors from Infineon Technologies. The series includes variants such as BCR183S and BCR183U, which feature different pin configurations and isolation structures within multichip packages.

Replacement Considerations

Check for other BCR183 series members like BCR183S or BCR183U if package changes are acceptable. Verify pinout compatibility and thermal resistance values before substituting.