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The BCR185E6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, packaged in SOT-23. It integrates a single NPN bias resistor with a resistance of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. Power dissipation is rated at 330 mW. The transition frequency (fT) is 100 MHz. Operating temperature ranges from -65°C to +150°C. It meets AEC-Q100 qualification standards for automotive applications.
Verify component authenticity through authorized distribution channels due to lifecycle status. Confirm package marking codes match official datasheet specifications. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Validate supplier documentation against Infineon official part identification records.
Select this component when a pre-biased PNP solution is required to reduce external passive components. The integrated 47 kΩ resistor simplifies drive circuitry compared to discrete transistors. Consider thermal management capabilities given the 330 mW power dissipation limit in enclosed environments.
This part belongs to Infineon's BCxRxx series of pre-biased digital transistors. These devices combine bipolar transistors with internal resistors to replace multiple discrete components. The BCR185 specifically provides PNP configuration with fixed biasing, streamlining design processes for switching and logic applications.
The BCR185E6327HTSA1 includes an integrated 47 kΩ base bias resistor.
Yes, the device is qualified according to AEC-Q100 standards for automotive use.