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The BCR185E6433HTMA1 is a PNP silicon digital transistor manufactured by Infineon Technologies, designed for surface-mount applications in the SOT-323-3 package. It integrates internal biasing resistors to simplify circuit design and reduce component count. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms with a resistor ratio of 0.21. It offers a minimum DC current gain (hFE) of 70 and operates within a temperature range from -55°C to +150°C, with a power dissipation rating of 250 mW.
Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm the specific suffix E6433 matches project requirements, as packaging variants may exist. Check for end-of-life status or discontinuation notices prior to finalizing procurement plans to ensure long-term supply availability.
Select this component when a PNP digital transistor with 50 V breakdown and 100 mA current capability is required. The 10 kOhm input resistance suits standard logic levels. Ensure the SOT-323-3 footprint aligns with the board layout. Compare against similar BCR series parts if different resistor ratios or NPN polarity are needed.
This part belongs to Infineon's BCR series of digital transistors, which combine bipolar junction transistors with integrated biasing resistors. The series provides standardized solutions for switching and amplification tasks, reducing external component requirements compared to discrete transistor configurations.
Publicly confirmed substitutes include the BCR185WH6327XTSA1. Verify pinout compatibility and electrical parameters before substitution.