BCR185WE6327

BCR185WE6327

$0.02
  • Description:TRANS PREBIAS PNP 50V SOT323-3
  • Series:-

SKU:ebac4afe04bf Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:250 mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323-3-1

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BCR185WE6327

Overview

The BCR185WE6327 is a single PNP silicon digital transistor manufactured by Infineon Technologies. It integrates a bipolar transistor with an integrated bias resistor network in a compact SOT-323 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a resistor ratio of 0.21. It operates within a temperature range of -65°C to +150°C, with a power dissipation rating of 250 mW.

Feature Summary

  • Integrates a PNP transistor with a built-in bias resistor network for simplified circuit design.
  • Utilizes a compact SOT-323 surface-mount package suitable for space-constrained applications.
  • Designed for high switching speeds with a transition frequency up to 200 MHz.

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Battery protection circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material content data sheet. Check for end-of-life notifications or discontinuation notices prior to finalizing procurement plans.

Selection Notes

Select this component when a single PNP digital transistor with a 10 kOhm base resistor is required. Ensure the application voltage does not exceed 50 V and current requirements remain below 100 mA. Verify that the SOT-323 footprint aligns with the PCB layout constraints.

Part Context

This part belongs to the Infineon BCR series of digital transistors, which combine bipolar junction transistors with internal resistors. The BCR185 variant specifically denotes a PNP configuration with a 10 kOhm input resistance. The E6327 suffix typically indicates the specific packaging and handling format provided by the manufacturer.

Replacement Considerations

  • BCR185WH6327XTSA1
  • SP000757894

FAQ

What is the typical input resistance value?

The typical input resistance is 10 kOhms.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

What is the transition frequency of this device?

The transition frequency (fT) is specified as 200 MHz.

BCR185WE6327BCR185WE6327
$0.02
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