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The BCR185WE6327 is a single PNP silicon digital transistor manufactured by Infineon Technologies. It integrates a bipolar transistor with an integrated bias resistor network in a compact SOT-323 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a resistor ratio of 0.21. It operates within a temperature range of -65°C to +150°C, with a power dissipation rating of 250 mW.
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Select this component when a single PNP digital transistor with a 10 kOhm base resistor is required. Ensure the application voltage does not exceed 50 V and current requirements remain below 100 mA. Verify that the SOT-323 footprint aligns with the PCB layout constraints.
This part belongs to the Infineon BCR series of digital transistors, which combine bipolar junction transistors with internal resistors. The BCR185 variant specifically denotes a PNP configuration with a 10 kOhm input resistance. The E6327 suffix typically indicates the specific packaging and handling format provided by the manufacturer.
The typical input resistance is 10 kOhms.
The maximum collector-emitter voltage (VCEO) is 50 V.
The transition frequency (fT) is specified as 200 MHz.