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The BCR185WE6327BTSA1 is a PNP digital transistor from Infineon Technologies, part of the BCR185 series. It integrates a single PNP bipolar junction transistor with internal bias resistors in an SOT-323 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and a resistor ratio of 0.21. It offers a minimum DC collector/base gain (hFE) of 70 and a power dissipation rating of 250 mW. The component is designed for high-frequency switching applications up to 200 MHz.
Verify the exact suffix configuration against official Infineon documentation, as variations exist within the BCR185 family. Confirm availability status, as specific variants may be subject to discontinuation notices. Ensure compatibility with standard SMD reflow soldering processes for the SOT-323 package. Cross-reference the full part number with authorized distributors to avoid counterfeit components.
Select this component when a compact PNP digital switch with integrated biasing is required. The 10 kOhm input resistance suits direct interfacing with standard logic outputs. Consider the 250 mW power dissipation limit for thermal management in dense layouts. Verify that the 50 V voltage rating meets the circuit's maximum operating conditions.
This part belongs to the BCR185 series of digital transistors, which combine NPN or PNP transistors with bias resistors. The series is designed to simplify circuit design by reducing the number of external components. The BCR185 variant specifically utilizes a PNP configuration, offering complementary solutions to NPN counterparts like the BCR135 series.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon's official cross-reference tools for verified alternatives.