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The BCR191WE6327 is a single NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a bipolar junction transistor with built-in bias resistors in an SOT-323 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 50. The device features a typical input resistance of 22 kOhms with a resistor ratio of 1. It operates within a temperature range of -65°C to +150°C and has a power dissipation rating of 250 mW.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and check for end-of-life notices prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to maintain reliability during assembly processes.
Select this component when a single NPN digital transistor with a 50 V rating and 100 mA current capacity is required. The fixed 22 kOhm input resistance and unity resistor ratio define its drive characteristics. Compare against alternatives if different gain values or packaging formats are necessary for the specific application constraints.
This part belongs to the BCR series of digital transistors from Infineon Technologies. These components combine discrete transistor functionality with integrated biasing networks to reduce external component count. The E6327 suffix typically denotes the specific tape-and-reel packaging configuration used for automated surface-mount assembly.
Publicly confirmed substitute part numbers for the BCR191WE6327 were not identified in the provided source material. Verify compatibility with potential replacements by matching the SOT-323 package, NPN polarity, 50 V VCEO rating, and 100 mA IC specifications.