BCR191WE6327HTSA1

Overview

The Infineon BCR191WE6327HTSA1 is a PNP silicon digital transistor featuring built-in bias resistors, designed for surface-mount applications in the SOT-323 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a maximum collector-base voltage (VCBO) of 50 V. The device supports a continuous collector current (IC) of up to 100 mA with a power dissipation (Ptot) rating of 250 mW. It exhibits a minimum DC current gain (hFE) of 50 and a typical input resistance ratio (R1/R2) of 1, with specific resistor values of R1 = 22 kΩ and R2 = 22 kΩ. The saturation voltage (VCE(sat)) is limited to 0.3 V, and the leakage current (ICBO) does not exceed 100 nA.

Feature Summary

• Integrated dual bias resistors simplify circuit design by reducing component count and board space requirements.
• High switching speed capability supported by a transition frequency (fT) of 200 MHz.
• Low saturation voltage ensures efficient signal switching with minimal power loss during conduction.

Applications

• General-purpose switching applications in consumer electronics.
• Driver circuits for logic interfaces and level shifting.
• Load switching in portable battery-powered devices.

Procurement Notes

Verify the exact suffix configuration against official Infineon documentation to confirm pinout and internal resistor tolerances. Ensure compatibility with standard SOT-323 footprints during PCB layout. Cross-reference the full ordering code with manufacturer databases to validate availability status and production lifecycle phase before finalizing procurement plans.

Selection Notes

Select this component when a compact PNP digital solution with matched internal resistors is required. The 22 kΩ resistor values provide a balanced drive capability suitable for standard logic families. Consider the 50 V voltage rating and 100 mA current limit to ensure operation within safe operating areas for the intended load conditions.

Part Context

This part belongs to Infineon's BCR series of pre-biased transistors, which integrate bipolar junction transistors with on-chip biasing networks. The BCR191 variant specifically utilizes a PNP configuration housed in the small SOT-323 outline, targeting high-density assembly needs in modern electronic equipment where space efficiency is critical.

Replacement Considerations

Check for direct substitutes such as the BCR191WH6327XTSA1 or other BCR191 family members with identical electrical characteristics and pin configurations. Verify that any alternative maintains the same 22 kΩ/22 kΩ resistor ratio and SOT-323 package dimensions to ensure mechanical and functional interchangeability.