BCR192E6327HTSA1

Overview

The BCR192E6327HTSA1 is a PNP silicon digital transistor featuring an integrated bias resistor network (R1 = 22kΩ, R2 = 47kΩ). It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device provides a DC current gain (hFE) of at least 70 and a transition frequency (fT) of 200MHz. Total power dissipation reaches 200mW in the SOT-23 package. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Integrated dual-bias resistor network simplifies switching circuit design
• AEC-Q101 qualification ensures reliability for automotive environments
• High-speed operation supported by 200MHz transition frequency

Applications

• Switching circuits
• Inverter logic stages
• Interface driver circuits

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required package variant. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to finalizing procurement orders.

Selection Notes

Select this component when a compact PNP solution with built-in base resistance is required. Verify that the 50V collector-emitter rating meets the system voltage requirements. Consider the 200mW thermal dissipation limit relative to ambient operating temperatures during circuit design.

Part Context

This part belongs to the BCR192 series of PNP digital transistors manufactured by Infineon Technologies. The series includes variants such as the BCR192W, which utilizes the SOT-323 package instead of the standard SOT-23 form factor found in this model.

Replacement Considerations

Direct substitutes include other PNP digital transistors with similar internal resistor ratios and voltage ratings. Verify pinout compatibility between SOT-23 packages before implementation.