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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT323
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：250 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323
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Overview
The BCR192WE6327HTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in an SOT-323 surface-mount package. It integrates bias resistors R1 (22 kΩ) and R2 (47 kΩ). Key electrical parameters include a collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at a case temperature up to 124°C. The device features a DC current gain of 70 minimum at 5 mA, a transition frequency of 200 MHz, and operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Integrated dual bias resistor network simplifies circuit design by reducing component count.
- High-speed switching capability supported by a 200 MHz transition frequency.
- Automotive-grade qualification ensures reliability under demanding operating conditions.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'E6327HTSA1' against official documentation to confirm packaging details and RoHS compliance status. Confirm that the SOT-323 variant meets thermal requirements for the intended application environment. Ensure compatibility with automated pick-and-place equipment specifications.
Selection Notes
Select this component when a compact PNP digital solution with integrated biasing is required. The SOT-323 package suits space-constrained designs. Verify that the 50V breakdown voltage and 100mA current limits align with the load requirements. Consider the 250mW power dissipation limit relative to ambient temperature derating curves.
Part Context
This part belongs to the BCR192 series of PNP silicon digital transistors. The 'W' designation indicates the SOT-323 package variant, while the suffix denotes specific ordering and packaging configurations. This series is designed for general-purpose switching and logic interface tasks.
Replacement Considerations
Cross-reference with other BCR192 variants such as BCR192E6327HTSA1 for SOT-23 package compatibility if pin-out and electrical characteristics remain identical. Verify resistor values and package dimensions before substitution.
FAQ
What are the internal resistor values?
The device includes built-in bias resistors R1 of 22 kΩ and R2 of 47 kΩ.
Is this component suitable for automotive applications?
Yes, the component is qualified according to AEC-Q101 standards.
What is the maximum power dissipation for the SOT-323 package?
The total power dissipation is 250 mW when the case temperature is maintained at or below 124°C.
