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The BCR196WE6327 is a single pre-biased PNP bipolar junction transistor manufactured by Infineon Technologies. It features an integrated resistor network within a compact SOT-323 surface-mount package. The device supports a collector-emitter breakdown voltage of 50 V and a continuous collector current of 70 mA. It includes a typical input resistance of 10 kOhms with a resistor ratio of 0.21. The component operates within a temperature range of -55°C to +150°C, dissipates up to 250 mW, and meets AEC-Q101 automotive qualification standards.
Verify the specific suffix configuration against official Infineon documentation to ensure compatibility with required thermal and electrical specifications. Confirm that the AEC-Q101 qualification aligns with target automotive application requirements. Cross-reference the datasheet for precise resistor tolerance values and thermal dissipation limits before finalizing procurement decisions.
Select this component when a compact PNP solution with integrated base biasing is required. The 50 V rating and 70 mA current capacity suit low-power switching tasks. Ensure the SOT-323 footprint matches the PCB layout constraints. Consider the 250 mW power dissipation limit relative to ambient operating conditions and thermal management strategies.
This part belongs to Infineon's BCR series of single pre-biased bipolar transistors. These components combine discrete transistor functionality with internal resistor networks to reduce external component count. The series is designed for high-volume manufacturing and offers consistent performance across automotive and industrial sectors.
Public confirmed substitute part numbers are not available in the provided source material.