BCR196WH6327XTSA1

BCR196WH6327XTSA1

$0.04
  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-

SKU:1d62b17f9d3f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):70 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:150 MHz
  • Power - Max:250 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323

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BCR196WH6327XTSA1

Overview

The BCR196WH6327XTSA1 is a single PNP pre-biased digital transistor manufactured by Infineon Technologies. It integrates a PNP bipolar junction transistor with an internal bias resistor network within a compact SOT-323-3 surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 70 mA. Key electrical specifications include a DC current gain (hFE) ranging from 50 to 100, a base-emitter saturation voltage of 1.1 V, and a collector-emitter saturation voltage of 0.4 V at specified test conditions. The component supports a power dissipation of 250 mW and operates across a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a PNP transistor with a built-in bias resistor for simplified circuit design
  • Provides high switching speed and low saturation voltages for efficient signal control
  • Encapsulated in a space-saving SOT-323-3 package suitable for dense PCB layouts

Applications

  • General-purpose switching applications in consumer electronics
  • Signal level shifting and buffering in portable devices
  • Driver circuits for LEDs and small loads in mobile handsets

Procurement Notes

Verify the specific suffix 'H6327' to ensure correct tape-and-reel packaging configuration compatible with automated assembly equipment. Confirm that the 'Last Time Buy' status aligns with long-term production requirements, as availability may be limited compared to standard active components. Cross-reference the datasheet revision date to ensure compliance with current RoHS and REACH regulations before finalizing procurement orders.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required to reduce external component count. It is suitable for designs where moderate current handling up to 70 mA is sufficient and low on-state voltage drop is critical for power efficiency. Consider the thermal performance within the SOT-323-3 package if operating near maximum power dissipation limits in confined spaces.

Part Context

This part belongs to Infineon's BCR series of pre-biased transistors, designed to replace discrete resistor-transistor networks. The BCR196 variant specifically targets PNP applications requiring fast switching and reliable performance in space-constrained environments. It serves as a direct replacement for various generic PNP digital transistors in legacy designs, offering improved consistency due to integrated manufacturing processes.

Replacement Considerations

Direct substitutes include other single PNP pre-biased transistors in SOT-323 packages with similar electrical ratings, such as those from Onsemi or ROHM. Verify pinout compatibility and ensure equivalent hFE ranges and saturation voltages to maintain circuit performance without redesign.

BCR196WH6327XTSA1BCR196WH6327XTSA1
$0.04
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