BCR198B6327HTLA1

BCR198B6327HTLA1

  • Description:TRANS PREBIAS PNP 50V SOT23
  • Series:-

SKU:aa2fe18fb6a8 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:190 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR198B6327HTLA1

Overview

The BCR198B6327HTLA1 is a PNP Silicon Digital Transistor from the Infineon BCR198 series, designed for switching, inverter, interface, and driver circuits. It integrates bias resistors R1 and R2, both typically 47 kΩ, with a resistor ratio of 1. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 70 at IC = 5 mA, a transition frequency (fT) typical of 190 MHz, and a collector-base capacitance of 3 pF. Thermal resistance (RthJS) varies by package: ≤ 240 K/W for SOT-23, ≤ 140 K/W for SOT-363, and ≤ 105 K/W for SOT-323. Total power dissipation ranges from 200 mW to 250 mW depending on the specific package variant.

Feature Summary

  • Integrated dual bias resistors (R1=47kΩ, R2=47kΩ) simplify circuit design
  • AEC-Q101 qualified for automotive applications
  • Lead-free RoHS compliant packaging

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the exact suffix 'HTLA1' against official Infineon documentation to confirm tape-and-reel specifications and marking codes. Confirm availability status as distribution data may vary. Ensure compliance with AEC-Q101 requirements if used in automotive contexts. Cross-reference thermal resistance values with the specific package type (SOT-23, SOT-323, or SOT-363) during procurement planning.

Selection Notes

Select based on required package type: SOT-23 (BCR198), SOT-323 (BCR198W), or SOT-363 (BCR198S). Note that BCR198S contains two internally isolated transistors. Verify thermal dissipation needs against the specific RthJS value for the chosen package. Ensure input voltage limits do not exceed Vi(fwd) of 80 V or Vi(rev) of 10 V. Check hFE requirements; minimum gain is 70.

Part Context

The BCR198 series comprises PNP digital transistors with integrated bias resistors. Variants include BCR198 (SOT-23), BCR198W (SOT-323), and BCR198S (SOT-363, dual transistor). All share similar electrical ratings but differ in thermal performance and physical footprint. The series is designed for compact designs requiring high switching speeds and low component count.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult Infineon's official replacement guide or distributor cross-reference tools for verified equivalents. Ensure any replacement matches the PNP polarity, 50 V VCEO rating, and 100 mA IC limit.

FAQ

What is the typical value of the integrated bias resistors?

Both R1 and R2 have a typical value of 47 kΩ.

Is the BCR198 series qualified for automotive applications?

Yes, the BCR198 series is qualified according to AEC-Q101.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

BCR198B6327HTLA1BCR198B6327HTLA1

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