BCR198E6327HTSA1

Overview

The BCR198E6327HTSA1 is a PNP silicon digital transistor featuring integrated bias resistors (R1 = 47 kΩ, R2 = 47 kΩ). It operates with a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The device provides a DC current gain of 70 at IC = 5 mA and achieves a transition frequency of 190 MHz. Total power dissipation reaches 200 mW in the SOT-23 package. Qualified under AEC-Q101 standards, it supports junction temperatures up to 150 °C.

Feature Summary

• Integrated dual bias resistors for simplified circuit design
• AEC-Q101 automotive qualification for reliability
• High-speed switching capability with defined transition frequency

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix E6327HTSA1 matches the required RoHS-compliant packaging and reel specifications. Ensure storage conditions adhere to moisture sensitivity levels prior to soldering.

Selection Notes

Select this PNP variant when negative logic inversion or high-side switching is required. The fixed 47 kΩ resistor ratio suits standard TTL/CMOS interface levels. Consider thermal derating curves if operating near the 150 °C junction limit.

Part Context

This component belongs to the BCR198 series of PNP digital transistors. It shares functional characteristics with other members like BCR198S and BCR198W but differs in physical package configuration. The series is designed for compact surface-mount implementations.

Replacement Considerations

Direct pin-compatible substitutes include other PNP digital transistors with similar 47 kΩ internal resistance ratios and 50 V ratings. Verify hFE and saturation voltage parameters match application requirements before substitution.