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The BCR198E6393HTSA1 is a PNP silicon digital transistor from the Infineon BCR198 series, housed in an SOT-23 package. It integrates two internal bias resistors, R1 and R2, both with a typical value of 47 kΩ and a ratio of 1:1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a maximum collector-base cutoff current (ICBO) of 100 nA, and a transition frequency (fT) of 190 MHz. Total power dissipation is rated at 200 mW for this specific package configuration.
Verify the exact ordering suffix against official Infineon documentation to confirm the specific tape-and-reel packaging format and marking code. Ensure compliance with RoHS directives and confirm that the SOT-23 thermal characteristics align with the target application's heat dissipation requirements before finalizing procurement.
Select this component when a compact PNP solution with integrated base drive resistors is required. The 47 kΩ resistor values are suitable for standard logic interface levels. Consider the 200 mW power dissipation limit and ensure adequate thermal management on the PCB footprint to maintain junction temperature within the specified 150 °C maximum operating range.
This part belongs to the BCR198 series of PNP digital transistors, which also includes variants like the BCR198S (dual transistor in SOT-363) and BCR198W (single transistor in SOT-323). All series members share similar electrical characteristics but differ in pin configurations and physical packages to accommodate different board space and isolation requirements.
Direct replacements must match the PNP polarity, 50 V VCEO rating, 100 mA IC current, and integrated 47 kΩ/47 kΩ resistor network. Verify that alternative components offer comparable hFE and fT specifications to ensure equivalent switching performance in existing designs.