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The BCR198E6433HTMA1 is a PNP Silicon Digital Transistor from the BCR198 series, manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors (R1 = 47 kΩ, R2 = 47 kΩ) in an SOT-23 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 70 at IC = 5 mA. The device features a transition frequency (fT) of 190 MHz and a total power dissipation (Ptot) of 200 mW at case temperatures up to 102°C. It operates within a junction temperature range of -65°C to 150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required package type and tape-and-reel specifications. Ensure compliance with RoHS directives and check for any active product discontinuation notices prior to finalizing procurement plans.
Select this component when a compact PNP digital transistor solution is required for low-voltage switching applications. The integrated 47 kΩ input resistor simplifies base drive requirements. Consider the thermal resistance characteristics and maximum power dissipation limits relative to the expected ambient operating conditions and PCB layout constraints.
This part belongs to the BCR198 series of silicon digital transistors. The series includes variants such as BCR198S (dual isolated transistors in SOT-363) and BCR198W (single transistor in SOT-323). All variants share similar electrical characteristics but differ in pin configurations and physical packaging to suit different board space and connectivity needs.
Direct replacements must match the PNP polarity, SOT-23 package, and integrated resistor values. Verify that alternative components meet the same AEC-Q101 qualification if used in automotive contexts. Check for equivalent hFE and fT specifications to ensure performance parity in existing designs.