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The BCR198TE6327 is a single PNP silicon digital transistor from Infineon Technologies, designed for surface-mount applications. It integrates an NPN Darlington transistor with external biasing resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a resistor ratio of 1. It operates within a temperature range of -65°C to +150°C, with a power dissipation rating of 250 mW in the SOT-323-3 package.
Verify the specific suffix TE6327 against official Infineon documentation to confirm tape-and-reel packaging and RoHS compliance status. Cross-reference the part number with the BCR198 series datasheet to ensure compatibility with existing designs, as manufacturing sources or end-of-life statuses may vary by region and date code.
Select this component when a high-gain PNP switching solution with integrated base drive is required. The 47 kOhm input resistance suits standard TTL/CMOS logic levels. Ensure the 100 mA current limit and 50 V voltage rating exceed the application's peak demands. Compare against the BCR198W variant if different packaging or resistor values are needed.
This part belongs to the BCR198 family of digital transistors, which combines a Darlington pair with bias resistors. The BCR198TE6327 specifically denotes the PNP configuration in an SOT-323-3 surface-mount package. It serves as a compact alternative to discrete resistor-transistor networks, offering consistent electrical characteristics and simplified PCB layout for digital control applications.
Publicly confirmed substitutes include the BCR198W and BCR198HTSA1. Verify pinout compatibility and electrical ratings before substitution. The BCR198W shares identical electrical specifications but may differ in packaging or ordering suffixes. Consult Infineon's selection guide for direct replacements within the BCR series.