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The BCR198WE6327BTSA1 is a PNP silicon digital transistor from the Infineon BCR198 series, housed in an SOT-323 surface-mount package. It integrates two internal bias resistors, R1 and R2, both with a nominal value of 47 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Electrical characteristics include a minimum DC current gain (hFE) of 70 at IC = 5 mA, a transition frequency (fT) of 190 MHz, and a total power dissipation (Ptot) of 250 mW at a case temperature up to 124°C.
Verify component authenticity by cross-referencing the manufacturer part number against official Infineon documentation. Confirm that the specific suffix matches the required SOT-323 packaging and reel specifications. Ensure compliance with RoHS lead-free requirements before integration into production assemblies.
Select this component when a compact PNP digital solution with integrated base drive is required. The fixed 47 kΩ resistor configuration eliminates external bias components. Verify that the 50 V voltage rating and 100 mA current limits align with the target application's electrical demands.
This component belongs to the BCR198 series, which includes variants such as the BCR198S featuring two internally isolated transistors in a single multichip package. The W designation specifically identifies the SOT-323 form factor within this product family.
Direct substitutes within the same series include BCR198S and BCR198W. Verify pinout compatibility and thermal resistance values when replacing units to ensure equivalent performance under operating conditions.
Both internal resistors, R1 and R2, have a nominal value of 47 kΩ.
Yes, the BCR198 series is qualified according to the AEC-Q101 standard.
The maximum junction temperature (Tj) is 150°C.