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The BCR198WH6327XTSA1 is a PNP silicon digital transistor from Infineon Technologies, housed in a SOT-323-3 surface-mount package. It integrates a single PNP transistor with built-in bias resistors R1 and R2, both valued at 47 kΩ. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total power dissipation (Ptot) of 250 mW. The device features a DC current gain (hFE) of 70 minimum, a transition frequency (fT) of 190 MHz, and an input resistor ratio (R1/R2) of 1. It operates within a junction temperature range up to 150 °C and complies with AEC-Q101 automotive qualification standards.
Verify the component against official Infineon documentation to confirm authenticity and compliance with RoHS directives. Ensure the specific suffix matches the required SOT-323 package configuration. Cross-reference the datasheet revision date to validate technical parameters before integration into production designs.
Select this component when a compact PNP solution with integrated base drive is required. The fixed 47 kΩ resistor values suit general logic interfacing. Consider thermal derating curves if operating near the maximum junction temperature limit of 150 °C.
This part belongs to the BCR198 series of PNP digital transistors. The 'W' designation specifically identifies the SOT-323-3 package variant. Other series members include the BCR198S (dual isolated transistors in SOT-363) and the standard BCR198 (single transistor in SOT-23).
Direct substitutes must match the PNP polarity, 50 V rating, and 47 kΩ/47 kΩ resistor configuration. Verify pinout compatibility between SOT-323 packages before substitution.