SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCR503E6327HTSA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single NPN bipolar junction transistor with internal biasing resistors within a surface-mount SOT-23 package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 500 mA. Key electrical parameters include a DC current gain (hFE) of at least 70 at IC=50mA and VCE=5V, a saturation voltage (VCEsat) of 300 mV max at IB=2.5mA/IC=50mA, and a transition frequency (fT) of 100 MHz. The component features a typical input resistance of 22 kΩ, a maximum power dissipation of 250 mW, and operates up to a junction temperature of +150 °C.
Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm end-of-life status as distributor data indicates obsolescence. Ensure compatibility with automated pick-and-place equipment regarding the SOT-23 footprint dimensions.
Select this component when a compact NPN switch with built-in base resistors is required. Compare hFE and VCEsat requirements against load conditions. Verify that the 22 kΩ typical input resistance aligns with the driving source impedance. Consider the 500 mA current limit for load capacity.
This part belongs to the Infineon BCR series of digital transistors, which combine BJTs with integrated resistor networks. The E6327HTSA1 suffix denotes the specific SOT-23-3 surface-mount packaging variant. These components are designed to replace discrete resistor-transistor combinations in space-constrained PCB layouts.
Publicly confirmed substitute part numbers were not identified in the provided reference material. Consult Infineon's official cross-reference tools or datasheets for qualified alternatives before implementation.