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The BCR505E6327HTSA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single transistor with built-in bias resistors, specifically R1 at 2.2 kΩ and R2 at 10 kΩ. The device is housed in a surface-mount SOT-23 package with three pins. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. It features a DC current gain (hFE) minimum of 70 at IC = 50 mA and operates within a junction temperature range up to 150 °C.
Verify the component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and AEC-Q101 qualification requirements relevant to the target application environment before finalizing procurement orders.
Select this component when a compact NPN switch with integrated base drive is required. The built-in resistor network eliminates external biasing components, reducing board space. Verify that the 50 V voltage rating and 500 mA current capacity meet the load requirements. Consider the thermal resistance characteristics if operating near the maximum power dissipation limits.
This part belongs to the BCR series of digital transistors from Infineon Technologies. These devices combine bipolar junction transistors with on-chip resistors to replace multiple discrete components. The E6327HTSA1 suffix indicates the specific SOT-23 packaging and reel quantity configuration used for automated surface-mount assembly processes.
Direct substitutes must match the NPN polarity, 50 V VCEO rating, and integrated resistor values (R1=2.2kΩ, R2=10kΩ). Verify pinout compatibility in the SOT-23 package. Check equivalent hFE and saturation voltage specifications to ensure functional parity in the existing circuit design.