BCR505E6778HTSA1

Overview

The Infineon BCR505E6778HTSA1 is an NPN silicon digital transistor featuring built-in bias resistors of R1=2.2 kΩ and R2=10 kΩ. It operates with a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW at temperatures up to 79 °C. The device meets AEC-Q101 qualification standards and utilizes a SOT-23 package.

Feature Summary

• Integrated dual-bias resistor network for simplified circuit design
• Qualified for automotive applications under AEC-Q101 standards
• Lead-free RoHS compliant packaging

Applications

• Automotive electronic systems requiring qualified discrete components
• General-purpose switching applications in consumer electronics
• Driver circuits for low-power loads

Procurement Notes

Verify the specific ordering suffix E6778 against official Infineon documentation to confirm tape-and-reel specifications and manufacturing origin. Confirm that the component status remains active or identify valid alternatives if the part has reached end-of-life status.

Selection Notes

Select this component when a single NPN digital transistor with a 2.2 kΩ base resistor is required. Ensure the application voltage does not exceed 50 V and the load current stays within the 500 mA limit. Verify thermal constraints align with the 330 mW dissipation rating.

Part Context

This component belongs to the BCR505 series of NPN silicon digital transistors manufactured by Infineon Technologies. The series provides integrated biasing solutions designed to reduce external component count and simplify PCB layout for switching applications.

Replacement Considerations

Consult the official Infineon BCR505 datasheet for cross-reference information. Identify equivalent parts from other manufacturers that match the 50 V rating, 500 mA current capacity, and SOT-23 package dimensions.