BCR512E6327HTSA1

BCR512E6327HTSA1

$0.28
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:92412763f321 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:100 MHz
  • Power - Max:330 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR512E6327HTSA1

Overview

The BCR512E6327HTSA1 is an NPN silicon digital transistor in a SOT-23 package. It integrates bias resistors R1 and R2, both rated at 4.7 kΩ with a ratio of 1:1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. The device features a DC current gain (hFE) of 60 minimum at IC = 50 mA, a transition frequency (fT) of 100 MHz, and a junction temperature range up to 150 °C.

Feature Summary

  • Integrated dual bias resistors for simplified circuit design
  • Automotive qualification compliant with AEC-Q101 standards
  • High switching speed with a 100 MHz transition frequency

Applications

  • General-purpose switching applications
  • Driver circuits for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify the component against official Infineon documentation to confirm authenticity and specifications. Ensure the ordering suffix matches the required tape-and-reel packaging configuration. Cross-reference the datasheet revision date to ensure compatibility with current design requirements and regulatory standards.

Selection Notes

Select this component when a single NPN transistor with integrated base and emitter resistors is required. The 4.7 kΩ resistor values provide a balanced input impedance suitable for standard logic levels. Consider the 500 mA collector current limit and 330 mW power dissipation capabilities during thermal analysis.

Part Context

This part belongs to the BCR series of pre-biased transistors manufactured by Infineon Technologies. These devices combine a single NPN bipolar junction transistor with internal biasing resistors to reduce board space and assembly complexity compared to discrete resistor-transistor networks.

Replacement Considerations

Check for direct replacements within the BCR series that share identical resistor ratios and pin configurations. Verify that any substitute maintains the same SOT-23 footprint and meets the 50 V voltage rating requirement.

BCR512E6327HTSA1BCR512E6327HTSA1
$0.28
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