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The BCR512E6327HTSA1 is an NPN silicon digital transistor in a SOT-23 package. It integrates bias resistors R1 and R2, both rated at 4.7 kΩ with a ratio of 1:1. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. The device features a DC current gain (hFE) of 60 minimum at IC = 50 mA, a transition frequency (fT) of 100 MHz, and a junction temperature range up to 150 °C.
Verify the component against official Infineon documentation to confirm authenticity and specifications. Ensure the ordering suffix matches the required tape-and-reel packaging configuration. Cross-reference the datasheet revision date to ensure compatibility with current design requirements and regulatory standards.
Select this component when a single NPN transistor with integrated base and emitter resistors is required. The 4.7 kΩ resistor values provide a balanced input impedance suitable for standard logic levels. Consider the 500 mA collector current limit and 330 mW power dissipation capabilities during thermal analysis.
This part belongs to the BCR series of pre-biased transistors manufactured by Infineon Technologies. These devices combine a single NPN bipolar junction transistor with internal biasing resistors to reduce board space and assembly complexity compared to discrete resistor-transistor networks.
Check for direct replacements within the BCR series that share identical resistor ratios and pin configurations. Verify that any substitute maintains the same SOT-23 footprint and meets the 50 V voltage rating requirement.