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The BCR521E6327HTSA1 is an NPN silicon digital transistor manufactured by Infineon Technologies, housed in a surface-mount SOT-23 package. It integrates built-in bias resistors with R1 and R2 both specified at 1 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 500 mA. Key electrical characteristics include a DC current gain (hFE) of 20 at IC = 50 mA and VCE = 5 V, and a transition frequency (fT) of 100 MHz under identical conditions. Total power dissipation is rated at 330 mW, with a junction temperature limit of 150 °C.
Verify the component status as this specific part number may be subject to lifecycle changes or obsolescence. Confirm that the ordering suffix E6327HTSA1 corresponds to the required tape-and-reel packaging format. Ensure compatibility with existing PCB footprints for the SOT-23 package before finalizing procurement orders.
Select this component when a single NPN digital transistor with equal input and output resistors is required. It serves as a direct replacement for standard BCX71 or BCW66 series transistors where integrated biasing reduces external component count. Verify that the 50V voltage rating and 500mA current capacity meet the specific load requirements of the target application.
This component belongs to the BCR52x series of NPN silicon digital transistors from Infineon. It shares the same SOT-23 form factor and general electrical architecture as variants like the BCR523 and BCR521U, differing primarily in the specific resistance values of the internal bias network. The E6327HTSA1 suffix denotes the specific mass production version and packaging configuration.
Publicly confirmed substitutes include the BCR521U and other members of the BCR52x family such as the BCR523E6327HTSA1, provided the internal resistor ratios match the circuit requirements.