BCR523E6327HTSA1

BCR523E6327HTSA1

$0.28
  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-

SKU:58f29c7c967b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:100 MHz
  • Power - Max:330 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23

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BCR523E6327HTSA1

Overview

The BCR523E6327HTSA1 is a single NPN silicon digital transistor housed in a PG-SOT23 surface-mount package. It integrates built-in bias resistors with a ratio of R1 to R2 equal to 0.1, where R1 is 1 kΩ and R2 is 10 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. The device features a transition frequency (fT) of 100 MHz, a minimum DC current gain (hFE) of 70, and a maximum collector cutoff current (ICBO) of 100 nA.

Feature Summary

  • Integrates NPN bipolar junction transistor with dual built-in bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 100 MHz transition frequency
  • Designed for low saturation voltage operation to minimize power loss during conduction

Applications

  • General-purpose switching circuits requiring pre-biased logic interfaces
  • Driver stages for relays, lamps, and solenoids
  • Level shifting between different logic voltage domains

Procurement Notes

Verify the specific ordering suffix E6327HTSA1 to confirm the reel packaging configuration and RoHS compliance status. Confirm end-of-life or obsolescence status directly with Infineon Technologies, as availability may be limited. Ensure the PG-SOT23 footprint matches the target PCB layout constraints before finalizing procurement orders.

Selection Notes

Select this component when a single NPN digital transistor with a 1:10 resistor ratio is required. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage. Check that the 500 mA collector current capability meets the load requirements. Consider the 330 mW power dissipation limit relative to the thermal environment and PCB copper area available for heat spreading.

Part Context

This part belongs to the Infineon BCR series of NPN silicon digital transistors. These devices combine a single transistor with internal biasing networks to reduce external component count. The PG-SOT23-3 package provides a compact solution for space-constrained designs. The HTSA1 suffix typically denotes automotive-grade qualification or specific manufacturing lot tracking within Infineon's portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the available documentation. Engineers should consult official cross-reference tools or contact Infineon Technologies directly for validated alternatives. Ensure any replacement maintains the same resistor ratio, voltage ratings, and package dimensions.

BCR523E6327HTSA1BCR523E6327HTSA1
$0.28
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