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The BCR523E6327HTSA1 is a single NPN silicon digital transistor housed in a PG-SOT23 surface-mount package. It integrates built-in bias resistors with a ratio of R1 to R2 equal to 0.1, where R1 is 1 kΩ and R2 is 10 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. The device features a transition frequency (fT) of 100 MHz, a minimum DC current gain (hFE) of 70, and a maximum collector cutoff current (ICBO) of 100 nA.
Verify the specific ordering suffix E6327HTSA1 to confirm the reel packaging configuration and RoHS compliance status. Confirm end-of-life or obsolescence status directly with Infineon Technologies, as availability may be limited. Ensure the PG-SOT23 footprint matches the target PCB layout constraints before finalizing procurement orders.
Select this component when a single NPN digital transistor with a 1:10 resistor ratio is required. Verify that the 50 V collector-emitter voltage rating exceeds the maximum operating voltage. Check that the 500 mA collector current capability meets the load requirements. Consider the 330 mW power dissipation limit relative to the thermal environment and PCB copper area available for heat spreading.
This part belongs to the Infineon BCR series of NPN silicon digital transistors. These devices combine a single transistor with internal biasing networks to reduce external component count. The PG-SOT23-3 package provides a compact solution for space-constrained designs. The HTSA1 suffix typically denotes automotive-grade qualification or specific manufacturing lot tracking within Infineon's portfolio.
Publicly confirmed substitute part numbers are not provided in the available documentation. Engineers should consult official cross-reference tools or contact Infineon Technologies directly for validated alternatives. Ensure any replacement maintains the same resistor ratio, voltage ratings, and package dimensions.