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The BCR533E6327HTSA1 is an NPN silicon digital transistor manufactured by Infineon Technologies. It integrates a single pre-biased transistor with built-in bias resistors, specifically R1 and R2 both at 10 kΩ. The device operates in a SOT-23 surface-mount package. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 500 mA, and a total power dissipation (Ptot) of 330 mW. It features a transition frequency (fT) of 100 MHz and complies with AEC-Q101 automotive qualification standards.
Verify the component status as End-of-Life or Last Time Buy through official Infineon channels before finalizing designs. Confirm that the specific E6327 ordering suffix corresponds to the required tape and reel packaging format for your manufacturing line. Ensure compliance with RoHS directives for the intended market.
Select this component when a compact NPN solution with integrated base drive is required. The fixed 10 kΩ internal resistors simplify biasing networks compared to discrete transistors. Verify that the 500 mA collector current and 330 mW power dissipation meet the thermal and load requirements of the target application environment.
This part belongs to the BCR series of digital transistors from Infineon Technologies. These components combine bipolar junction transistors with on-chip resistors to reduce board space and assembly complexity. The BCR533 variant specifically provides matched 10 kΩ resistors for balanced input characteristics.
Check for direct cross-references within the BCR series family. Verify pinout compatibility if substituting with other manufacturers' digital transistors. Ensure equivalent VCEO, IC, and R1/R2 values are maintained for functional parity.